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IXTU05N100

MOSFET 0.5 Amps 1000V

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IXTU05N100: MOSFET 0.5 Amps 1000V

IXTU05N100 Data Sheet

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Part Number:
IXTU05N100
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1 KV
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 750 mA
Resistance Drain-Source RDS (on) : 17 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-251    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 17 Ohms
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-251
Drain-Source Breakdown Voltage : 1 KV
Continuous Drain Current : 750 mA


Parameters:

Technical/Catalog InformationIXTU05N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C750mA
Rds On (Max) @ Id, Vgs17 Ohm @ 375mA, 10V
Input Capacitance (Ciss) @ Vds 260pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs7.8nC @ 10V
Package / CaseIPak, TO-251 (2 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTU05N100
IXTU05N100



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