MOSFET 86 Amps 200V 29 Rds
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SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Packaging : | Bulk |
Technical/Catalog Information | IXTQ86N20T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 86A |
Rds On (Max) @ Id, Vgs | 29 mohm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 4500pF @ 25V |
Power - Max | 480W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 90nC @ 10V |
Package / Case | TO-3P |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTQ86N20T IXTQ86N20T |