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IXTQ100N25P

MOSFET 100 Amps 250V 0.027 Rds

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SeekIC No. : 00154459 Detail

IXTQ100N25P: MOSFET 100 Amps 250V 0.027 Rds

IXTQ100N25P Data Sheet

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Part Number:
IXTQ100N25P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.027 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 250 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.027 Ohms


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect


Application

·Easy to mount
·Space savings
·High power density


Parameters:

Technical/Catalog InformationIXTQ100N25P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs27 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6300pF @ 25V
Power - Max600W
PackagingTube
Gate Charge (Qg) @ Vgs185nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ100N25P
IXTQ100N25P



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