Position: Home  > All Categories> Integrated Circuits (ICs) > IXTQ64N25P

IXTQ64N25P

MOSFET 64 Amps 250V 0.049 Rds

product image

IXTQ64N25P Picture
See larger image
SeekIC No. : 00154292 Detail

IXTQ64N25P: MOSFET 64 Amps 250V 0.049 Rds

IXTQ64N25P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTQ64N25P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 64 A
Resistance Drain-Source RDS (on) : 0.049 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 64 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.049 Ohms


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect


Application

·Easy to mount
·Space savings
·High power density


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M		 250
250		 V
VGES Continuous ±20 V
ID25
ID(RMS)
IDM		 TC = 25
External lead current limit
TC = 25, pulse width limited by TJM		 82
75
250		 A
A
IAR
EAR
EAS		 TC = 25
TC = 25
TC = 25		 60
40
1.0		 A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4 Ω		 10 V/ns
PD TC = 25 400 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P
TO-268		 5.5
5.0		 g
g



Parameters:

Technical/Catalog InformationIXTQ64N25P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C64A
Rds On (Max) @ Id, Vgs49 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3450pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs105nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ64N25P
IXTQ64N25P



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Integrated Circuits (ICs)
TA8435H
1MB12-140
RF and RFID
X3C26P1-30S
1P620S
Circuit Protection
A50QS75-4Y
F-17*77
Tools
TCP202
G084SN05 V.3
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Test Equipment
TOP853
TOP2005
View more