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IXTQ62N15P

MOSFET 62 Amps 150V 0.04 Rds

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SeekIC No. : 00151235 Detail

IXTQ62N15P: MOSFET 62 Amps 150V 0.04 Rds

IXTQ62N15P Data Sheet

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Part Number:
IXTQ62N15P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 62 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect


Specifications

Symbol
Test Conditions
Ratings
VDSS
VDGR
 TJ = 25 to 175
TJ = 25 to 175; RGS = 1 M
150
150
V
V
VGS
VGSM
 Continuous
Transient
±20
±30
V
V
ID25
IDM
 TC = 25
TC = 25, pulse width limited by TJM
62
150
A
A
IAR
EAR
EAS
 TC = 25
TC = 25
TC = 25
50
30
1.0
A
mJ
J
dv/dt
 IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150, RG = 100
10
V/ns
PD
 TC = 25
350
W
TJ
TJM
Tstg
  
-55 ... +175
175
-55 ... +150


TL
TSOLD
 1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
2600

Md
 Mounting torque (TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
 TO-3P
TO-220
TO-263
5.5
4
3
g
g
g



Parameters:

Technical/Catalog InformationIXTQ62N15P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs40 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2250pF @ 25V
Power - Max350W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ62N15P
IXTQ62N15P



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