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IXTQ52P10P

MOSFET -52.0 Amps -100V 0.050 Rds

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SeekIC No. : 00154484 Detail

IXTQ52P10P: MOSFET -52.0 Amps -100V 0.050 Rds

IXTQ52P10P Data Sheet

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Part Number:
IXTQ52P10P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 52 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.05 Ohms
Drain-Source Breakdown Voltage : - 100 V


Parameters:

Technical/Catalog InformationIXTQ52P10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C52A
Rds On (Max) @ Id, Vgs50 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2845pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ52P10P
IXTQ52P10P



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