IXTQ52N30P Selling Leads, Price trend , Ixys, IXTQ52N30P DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151259 Detail

IXTQ52N30P: MOSFET 52 Amps 300V 0.066 Ohm Rds

IXTQ52N30P Data Sheet

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Part Number:: IXTQ52N30P
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/21

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	300 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	52 A
Resistance Drain-Source RDS (on) :	0.066 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3P	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 52 A
Package / Case : TO-3P
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.066 Ohms

Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

Application

􀁺 ·Easy to mount
􀁺 ·Space savings
􀁺 ·High power density

Parameters:

Technical/Catalog Information	IXTQ52N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	52A
Rds On (Max) @ Id, Vgs	66 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3490pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ52N30P IXTQ52N30P

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IXTQ52N30P

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