MOSFET 48 Amps 200V 50 Rds
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SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V |
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 48 A |
Resistance Drain-Source RDS (on) : | 50 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 175 C | Package / Case : | TO-3P |
Packaging : | Bulk |
Technical/Catalog Information | IXTQ48N20T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 48A |
Rds On (Max) @ Id, Vgs | - |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | - |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-3P |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTQ48N20T IXTQ48N20T |