Position: Home  > All Categories> Integrated Circuits (ICs) > IXTQ36N50P

IXTQ36N50P

MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

product image

IXTQ36N50P Picture
See larger image
SeekIC No. : 00154411 Detail

IXTQ36N50P: MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

IXTQ36N50P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTQ36N50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.17 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.17 Ohms
Package / Case : TO-3P


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M		 500
500		 V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25
TC = 25, pulse width limited by TJM		 36
100		 A
A
IAR
EAR
EAS		 TC = 25
TC = 25
TC = 25		 36
50
1.5		 A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4 Ω		 10 V/ns
PD TC = 25 500 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P
TO-268		 5.5
5.0		 g
g



Description

·Easy to mount
·Space savings
·High power density

IXTQ36N50P




Parameters:

Technical/Catalog InformationIXTQ36N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs170 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5500pF @ 25V
Power - Max540W
PackagingTube
Gate Charge (Qg) @ Vgs85nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ36N50P
IXTQ36N50P



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Circuit Protection
A50QS75-4Y
F-17*77
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Transformers
TM-09210
BV222-1-00992
Isolators
HCPL062N
HCPL316J
View more