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IXTQ36N50P

MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

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SeekIC No. : 00154411 Detail

IXTQ36N50P: MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

IXTQ36N50P Data Sheet

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Part Number:
IXTQ36N50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.17 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.17 Ohms
Package / Case : TO-3P


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M		 500
500		 V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25
TC = 25, pulse width limited by TJM		 36
100		 A
A
IAR
EAR
EAS		 TC = 25
TC = 25
TC = 25		 36
50
1.5		 A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4 Ω		 10 V/ns
PD TC = 25 500 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P
TO-268		 5.5
5.0		 g
g



Description

·Easy to mount
·Space savings
·High power density

IXTQ36N50P




Parameters:

Technical/Catalog InformationIXTQ36N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs170 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5500pF @ 25V
Power - Max540W
PackagingTube
Gate Charge (Qg) @ Vgs85nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ36N50P
IXTQ36N50P



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