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IXTQ30N60P

MOSFET 30.0 Amps 600 V 0.24 Ohm Rds

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SeekIC No. : 00154171 Detail

IXTQ30N60P: MOSFET 30.0 Amps 600 V 0.24 Ohm Rds

IXTQ30N60P Data Sheet

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Part Number:
IXTQ30N60P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.24 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.24 Ohms


Parameters:

Technical/Catalog InformationIXTQ30N60P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs240 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5050pF @ 25V
Power - Max540W
PackagingTube
Gate Charge (Qg) @ Vgs82nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ30N60P
IXTQ30N60P



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