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IXTQ26N50P

MOSFET 26.0 Amps 500 V 0.23 Ohm Rds

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SeekIC No. : 00151004 Detail

IXTQ26N50P: MOSFET 26.0 Amps 500 V 0.23 Ohm Rds

IXTQ26N50P Data Sheet

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Part Number:
IXTQ26N50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.23 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-3P
Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.23 Ohms


Parameters:

Technical/Catalog InformationIXTQ26N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs230 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs65nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ26N50P
IXTQ26N50P



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