IXTQ24N55Q Selling Leads, Price trend , Ixys, IXTQ24N55Q DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00154450 Detail

IXTQ24N55Q: MOSFET 24 Amps 550V 0.270 Rds

IXTQ24N55Q Data Sheet

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Part Number:: IXTQ24N55Q
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/5/19

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	550 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	24 A
Resistance Drain-Source RDS (on) :	0.27 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3P	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 24 A
Drain-Source Breakdown Voltage : 550 V
Resistance Drain-Source RDS (on) : 0.27 Ohms
Package / Case : TO-3P

Parameters:

Technical/Catalog Information	IXTQ24N55Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	270 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ24N55Q IXTQ24N55Q

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IXTQ24N55Q

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