IXTQ200N06P

MOSFET 200 Amps 60V 0.006 Ohm Rds

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SeekIC No. : 00154236 Detail

IXTQ200N06P: MOSFET 200 Amps 60V 0.006 Ohm Rds

floor Price/Ceiling Price

Part Number:
IXTQ200N06P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 200 A
Resistance Drain-Source RDS (on) : 0.006 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.006 Ohms
Continuous Drain Current : 200 A


Parameters:

Technical/Catalog InformationIXTQ200N06P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C200A
Rds On (Max) @ Id, Vgs5 mOhm @ 400A, 15V
Input Capacitance (Ciss) @ Vds 5400pF @ 25V
Power - Max714W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ200N06P
IXTQ200N06P



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