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IXTQ182N055T

MOSFET 182 Amps 55V 4.4 Rds

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SeekIC No. : 00154466 Detail

IXTQ182N055T: MOSFET 182 Amps 55V 4.4 Rds

IXTQ182N055T Data Sheet

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Part Number:
IXTQ182N055T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 182 A Resistance Drain-Source RDS (on) : 0.005 Ohms
Configuration : Single Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole Package / Case : TO-3P
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.005 Ohms
Package / Case : TO-3P
Continuous Drain Current : 182 A


Parameters:

Technical/Catalog InformationIXTQ182N055T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C182A
Rds On (Max) @ Id, Vgs5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 4850pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs114nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ182N055T
IXTQ182N055T



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