MOSFET 170 Amps 100V 0.009 Ohm Rds
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SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 170 A | ||
Resistance Drain-Source RDS (on) : | 0.009 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3P | Packaging : | Tube |
Technical/Catalog Information | IXTQ170N10P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 170A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 6000pF @ 25V |
Power - Max | 714W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 198nC @ 10V |
Package / Case | TO-3P |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTQ170N10P IXTQ170N10P |