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IXTQ160N085T

MOSFET 160 Amps 85V 0.006 Ohm Rds

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SeekIC No. : 00164426 Detail

IXTQ160N085T: MOSFET 160 Amps 85V 0.006 Ohm Rds

IXTQ160N085T Data Sheet

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Part Number:
IXTQ160N085T
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 85 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 0.006 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 160 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.006 Ohms
Drain-Source Breakdown Voltage : 85 V


Parameters:

Technical/Catalog InformationIXTQ160N085T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs6 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 6400pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs164nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ160N085T
IXTQ160N085T



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