MOSFET 160 Amps 75V 5.5 Rds
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SpecificationsVDSS TJ = 25° C to 150°C ..................... 600 VVDGR TJ = 25° C to 150° C; RGS =...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V |
Continuous Drain Current : | 160 A | Resistance Drain-Source RDS (on) : | 0.006 Ohms |
Configuration : | Single | Maximum Operating Temperature : | + 175 C |
Mounting Style : | Through Hole | Package / Case : | TO-3P |
Packaging : | Tube |
Technical/Catalog Information | IXTQ160N075T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 160A |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 4950pF @ 25V |
Power - Max | 360W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 112nC @ 10V |
Package / Case | TO-3P |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTQ160N075T IXTQ160N075T |