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IXTQ150N15P

MOSFET 150 Amps 150V 0.013 Rds

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SeekIC No. : 00154336 Detail

IXTQ150N15P: MOSFET 150 Amps 150V 0.013 Rds

IXTQ150N15P Data Sheet

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Part Number:
IXTQ150N15P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 150 A
Resistance Drain-Source RDS (on) : 0.013 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.013 Ohms
Package / Case : TO-3P
Continuous Drain Current : 150 A


Parameters:

Technical/Catalog InformationIXTQ150N15P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C150A
Rds On (Max) @ Id, Vgs13 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5800pF @ 25V
Power - Max714W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ150N15P
IXTQ150N15P



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