IXTQ150N06P Selling Leads, Price trend , Ixys, IXTQ150N06P DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00154007 Detail

IXTQ150N06P: MOSFET 150 Amps 60V 0.01 Ohm Rds

IXTQ150N06P Data Sheet

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Part Number:: IXTQ150N06P
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/5/18

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What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	150 A
Resistance Drain-Source RDS (on) :	0.01 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-3P	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-3P
Continuous Drain Current : 150 A
Resistance Drain-Source RDS (on) : 0.01 Ohms

Parameters:

Technical/Catalog Information	IXTQ150N06P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	150A
Rds On (Max) @ Id, Vgs	10 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	480W
Packaging	Tube
Gate Charge (Qg) @ Vgs	118nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ150N06P IXTQ150N06P

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IXTQ150N06P

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