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IXTQ140N10P

MOSFET 140 Amps 100V 0.011 Rds

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SeekIC No. : 00154343 Detail

IXTQ140N10P: MOSFET 140 Amps 100V 0.011 Rds

IXTQ140N10P Data Sheet

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Part Number:
IXTQ140N10P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-3P
Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.011 Ohms


Features:

· International standard packages
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
    - easy to drive and to protect


Specifications

Symbol
Test Conditions
Maximum
Ratings
VDSS
VDGR
 TC = 25to 175
TJ = 25 to 175; RGS = 1 M
100
100
V
V
VGS
VGSM
 Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
 TC = 25,
External lead current limit
TC = 25, pulse width limited by TJM
140
75
300
A
A
A
IAR
EAR
EAS
 TC = 25
TC = 25
TC = 25
60
80
2.5
A
mJ
J
dv/dt
 IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 4
10
V/ns
PD
 TC = 25
600
W
TJ
TJM
Tstg
 
-55 ... +150
150
-55 ... +150


TL
VISOL
 1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260

Md
 Mounting torque (TO-3P)
1.13/10
Nm/lb.in.
Weight
 TO-3P
TO-268
5.5
5.0
g
g



Parameters:

Technical/Catalog InformationIXTQ140N10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C140A
Rds On (Max) @ Id, Vgs11 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4700pF @ 25V
Power - Max600W
PackagingTube
Gate Charge (Qg) @ Vgs155nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ140N10P
IXTQ140N10P



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