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IXTQ110N10P

MOSFET 110 Amps 100V 0.015 Rds

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SeekIC No. : 00154145 Detail

IXTQ110N10P: MOSFET 110 Amps 100V 0.015 Rds

IXTQ110N10P Data Sheet

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Part Number:
IXTQ110N10P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.015 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 110 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect


Application

·Easy to mount
·Space savings
·High power density


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M		 100
100		 V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25
External lead current limit
TC = 25, pulse width limited by TJM		 110
75
250		 A
A
A
IAR
EAR
EAS		 TC = 25
TC = 25
TC = 25		 60
40
1.0		 A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4 Ω		 10 V/ns
PD TC = 25 480 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P
TO-268		 5.5
5.0		 g
g



Parameters:

Technical/Catalog InformationIXTQ110N10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs15 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3550pF @ 25V
Power - Max480W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTQ110N10P
IXTQ110N10P



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