MOSFET -96 Amps -85V 0.013 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 85 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | - 96 A | ||
Resistance Drain-Source RDS (on) : | 13 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 AB | Packaging : | Tube |
Technical/Catalog Information | IXTP96P085T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 85V |
Current - Continuous Drain (Id) @ 25° C | 96A |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 13100pF @ 25V |
Power - Max | 298W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 180nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTP96P085T IXTP96P085T |