MOSFET 0.1 Amps 1000V 110 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.1 A | ||
Resistance Drain-Source RDS (on) : | 90 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
1000 1000 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM |
TC = 25°C TC = 25°C, pulse width limited by TJM |
100 400 |
A A |
PD | TC = 25°C TA = 25°C |
25 1.1 |
W W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.063 in.) from case for 10 s | 300 | °C |
Technical/Catalog Information | IXTP01N100D |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 100mA |
Rds On (Max) @ Id, Vgs | 110 Ohm @ 50mA, 0V |
Input Capacitance (Ciss) @ Vds | 120pF @ 25V |
Power - Max | 1.1W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-220 |
FET Feature | Depletion Mode |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTP01N100D IXTP01N100D |