IXTP02N50D

MOSFET 0.2 Amps 500V 30 Rds

product image

IXTP02N50D Picture
SeekIC No. : 00151127 Detail

IXTP02N50D: MOSFET 0.2 Amps 500V 30 Rds

floor Price/Ceiling Price

Part Number:
IXTP02N50D
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 30 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 30 Ohms


Features:

· Normally ON mode
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Fast switching speed



Application

· Level shifting
· Triggers
· Solid state relays
· Current regulators



Specifications

Symbol
Conditions
Ratings
VDSX
VDGX
TJ = 25 to 150
TJ = 25 to 150
500 V
500 V
VGS
VGSM
Continuous
Transient
± 20 V
± 30 V
IDSS
IDM
TC = 25; TJ = 25 to 150
TC = 25, pulse width limited by TJ
200 mA
800 mA
PD
TC = 25
T = 25
25 W
1.1 W
TJ
TJM
Tstg
 
-55 ... +150
150
-55 ... +150
TL
TISOL
1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
300
300
Md
Mounting torque TO-220
1.3 / 10 Nm/lb.
Weight
TO-220
TO-251
TO-252
4 g
0.8 g
0.8 g



Parameters:

Technical/Catalog InformationIXTP02N50D
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C200mA
Rds On (Max) @ Id, Vgs30 Ohm @ 50mA, 0V
Input Capacitance (Ciss) @ Vds 120pF @ 25V
Power - Max1.1W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220
FET FeatureDepletion Mode
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP02N50D
IXTP02N50D



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Potentiometers, Variable Resistors
Inductors, Coils, Chokes
Power Supplies - External/Internal (Off-Board)
Crystals and Oscillators
View more