IXTP02N50D

MOSFET 0.2 Amps 500V 30 Rds

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IXTP02N50D Picture
SeekIC No. : 00151127 Detail

IXTP02N50D: MOSFET 0.2 Amps 500V 30 Rds

floor Price/Ceiling Price

Part Number:
IXTP02N50D
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 30 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 30 Ohms


Features:

· Normally ON mode
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Fast switching speed



Application

· Level shifting
· Triggers
· Solid state relays
· Current regulators



Specifications

Symbol
Conditions
Ratings
VDSX
VDGX
TJ = 25 to 150
TJ = 25 to 150
500 V
500 V
VGS
VGSM
Continuous
Transient
± 20 V
± 30 V
IDSS
IDM
TC = 25; TJ = 25 to 150
TC = 25, pulse width limited by TJ
200 mA
800 mA
PD
TC = 25
T = 25
25 W
1.1 W
TJ
TJM
Tstg
 
-55 ... +150
150
-55 ... +150
TL
TISOL
1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
300
300
Md
Mounting torque TO-220
1.3 / 10 Nm/lb.
Weight
TO-220
TO-251
TO-252
4 g
0.8 g
0.8 g



Parameters:

Technical/Catalog InformationIXTP02N50D
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C200mA
Rds On (Max) @ Id, Vgs30 Ohm @ 50mA, 0V
Input Capacitance (Ciss) @ Vds 120pF @ 25V
Power - Max1.1W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220
FET FeatureDepletion Mode
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP02N50D
IXTP02N50D



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