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IXTP8N50PM

MOSFET 4.6 Amps 500V 0.8 Ohm Rds

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SeekIC No. : 00153871 Detail

IXTP8N50PM: MOSFET 4.6 Amps 500V 0.8 Ohm Rds

IXTP8N50PM Data Sheet

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Part Number:
IXTP8N50PM
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 0.88 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 0.88 Ohms


Parameters:

Technical/Catalog InformationIXTP8N50PM
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs800 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 1050pF @ 25V
Power - Max41W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP8N50PM
IXTP8N50PM



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