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IXTP76P10T

MOSFET -76 Amps -100V 0.024 Rds

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SeekIC No. : 00151040 Detail

IXTP76P10T: MOSFET -76 Amps -100V 0.024 Rds

IXTP76P10T Data Sheet

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Part Number:
IXTP76P10T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 76 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.024 Ohms
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : 76 A


Parameters:

Technical/Catalog InformationIXTP76P10T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C76A
Rds On (Max) @ Id, Vgs24 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 13700pF @ 25V
Power - Max298W
PackagingTube
Gate Charge (Qg) @ Vgs197nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP76P10T
IXTP76P10T



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