IXTP60N10T Selling Leads, Price trend , Ixys, IXTP60N10T DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158482 Detail

IXTP60N10T: MOSFET MOSFET Id60 BVdass100

IXTP60N10T Data Sheet

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Part Number:: IXTP60N10T
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/10/17

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MOSFET N-CH 1200V 200MA TO-220

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Continuous Drain Current :	60 A	Resistance Drain-Source RDS (on) :	0.018 Ohms
Configuration :	Single	Maximum Operating Temperature :	+ 175 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB
Packaging :	Tube

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.018 Ohms

Parameters:

Technical/Catalog Information	IXTP60N10T
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	18 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	2650pF @ 25V
Power - Max	176W
Packaging	Tube
Gate Charge (Qg) @ Vgs	49nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTP60N10T IXTP60N10T

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IXTP60N10T

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