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IXTP48N20T

MOSFET 48 Amps 200V 50 Rds

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SeekIC No. : 00150897 Detail

IXTP48N20T: MOSFET 48 Amps 200V 50 Rds

IXTP48N20T Data Sheet

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Part Number:
IXTP48N20T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.05 Ohms


Parameters:

Technical/Catalog InformationIXTP48N20T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C48A
Rds On (Max) @ Id, Vgs50 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max250W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP48N20T
IXTP48N20T



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