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IXTP3N50P

MOSFET 3.6 Amps 500 V 2 Ohm Rds

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SeekIC No. : 00153824 Detail

IXTP3N50P: MOSFET 3.6 Amps 500 V 2 Ohm Rds

IXTP3N50P Data Sheet

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Part Number:
IXTP3N50P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 2 Ohms


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect


Specifications

Symbol Parameter Rating Unit
VDSS Drain-Source Voltage 500 V
VDGR TJ = 25° C to 150° C; RGS = 1 M 500 V
VGSS
VGSM		   ±30
±40		 V
V
ID25

IDM		 Tc=25

Tc=25 pulse width limited by TJM		 3.6

8		 A
EAS Tc=25 180 mJ
IAR Tc=25 3 A
EAR Tc=25 10 mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS,
T 150° C, R = 20 		10 V/ns
TJ
TJM
Tstg		 Operating Junction and
Storage Temperature Range		 -55 ... +150
150
-55 ... +150
PD TC = 25

 70 W
TL
TSOLD
 1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s		 300
260
Md Mounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-220
TO-263
TO-252		 4
3
0.8		 g
g
g




Parameters:

Technical/Catalog InformationIXTP3N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C3.6A
Rds On (Max) @ Id, Vgs2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 409pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs9.3nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP3N50P
IXTP3N50P



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