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IXTP36N30P

MOSFET 36 Amps 300V 0.11 Rds

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SeekIC No. : 00164451 Detail

IXTP36N30P: MOSFET 36 Amps 300V 0.11 Rds

IXTP36N30P Data Sheet

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Part Number:
IXTP36N30P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.11 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.11 Ohms
Continuous Drain Current : 36 A
Drain-Source Breakdown Voltage : 300 V


Parameters:

Technical/Catalog InformationIXTP36N30P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs110 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2250pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP36N30P
IXTP36N30P



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