MOSFET 32 Amps 200V 78 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 32 A | ||
Resistance Drain-Source RDS (on) : | 0.078 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Bulk |
Technical/Catalog Information | IXTP32N20T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 32A |
Rds On (Max) @ Id, Vgs | 72 mOhm @ 16A, 10V |
Input Capacitance (Ciss) @ Vds | 1760pF @ 25V |
Power - Max | 200W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 38nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTP32N20T IXTP32N20T |