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IXTP2R4N120P

MOSFET 2.4 Amps 1200V 7.5 Rds

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SeekIC No. : 00154264 Detail

IXTP2R4N120P: MOSFET 2.4 Amps 1200V 7.5 Rds

IXTP2R4N120P Data Sheet

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Part Number:
IXTP2R4N120P
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 7.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 1200 V
Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 7.5 Ohms


Parameters:

Technical/Catalog InformationIXTP2R4N120P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C2.4A
Rds On (Max) @ Id, Vgs7.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1207pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs37nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP2R4N120P
IXTP2R4N120P



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