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IXTP26P20P

MOSFET -26.0 Amps -200V 0.170 Rds

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SeekIC No. : 00154260 Detail

IXTP26P20P: MOSFET -26.0 Amps -200V 0.170 Rds

IXTP26P20P Data Sheet

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Part Number:
IXTP26P20P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.17 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.17 Ohms
Drain-Source Breakdown Voltage : - 200 V
Continuous Drain Current : 26 A


Parameters:

Technical/Catalog InformationIXTP26P20P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs170 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2740pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs56nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP26P20P
IXTP26P20P



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