IXTP200N085T Selling Leads, Price trend , Ixys, IXTP200N085T DataSheet download, circuit diagram from SeekIC.com

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IXTP200N085T: MOSFET MOSFET Id200 BVdass85

IXTP200N085T Data Sheet

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Part Number:: IXTP200N085T
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/12/30

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US $.72 - .72 / Piece

MOSFET N-CH 1200V 200MA TO-220

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	85 V
Continuous Drain Current :	200 A	Resistance Drain-Source RDS (on) :	0.005 Ohms
Configuration :	Single	Maximum Operating Temperature :	+ 175 C
Mounting Style :	Through Hole	Package / Case :	TO-220
Packaging :	Tube

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.005 Ohms
Continuous Drain Current : 200 A
Drain-Source Breakdown Voltage : 85 V

Parameters:

Technical/Catalog Information	IXTP200N085T
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	85V
Current - Continuous Drain (Id) @ 25° C	200A
Rds On (Max) @ Id, Vgs	5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	7600pF @ 25V
Power - Max	480W
Packaging	Tube
Gate Charge (Qg) @ Vgs	152nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTP200N085T IXTP200N085T

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IXTP200N085T

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