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IXTP1N80

MOSFET 1 Amps 800V 11 Rds

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SeekIC No. : 00164442 Detail

IXTP1N80: MOSFET 1 Amps 800V 11 Rds

IXTP1N80 Data Sheet

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Part Number:
IXTP1N80
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 11 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB
Packaging : Bulk
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 11 Ohms


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR 		TJ = 25°C to 150°CV
TJ = 25°C to 150°C; RGS = 1 M		 800
800		 V
V
VGS
VGSM 		Continuous
Transient		 ±20
±30		 V
V
ID25
IDM 		TC = 25°C
TC = 25°C, pulse width limited by TJM		 750
3		 mA
mA
IAR
EAR
EAS 		TC = 25°C
TC = 25°C
 1.0
5
100		 A
mJ
mJ
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 47 		3 V/ns
PD TC = 25°C 40 W
TJ
TJM 		  -55 ... +150 150
Tstg -55 ... +150 		°C
°C
°C



Parameters:

Technical/Catalog InformationIXTP1N80
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C750mA
Rds On (Max) @ Id, Vgs11 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 220pf @ 25V
Power - Max40W
PackagingBulk
Gate Charge (Qg) @ Vgs8.5nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP1N80
IXTP1N80



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