Position: Home  > All Categories> Integrated Circuits (ICs) > IXTP110N055P

IXTP110N055P

MOSFET 110 Amps 55V 0.0135 Rds

product image

IXTP110N055P Picture
See larger image
SeekIC No. : 00154033 Detail

IXTP110N055P: MOSFET 110 Amps 55V 0.0135 Rds

IXTP110N055P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTP110N055P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.0135 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 0.0135 Ohms


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect


Application

·Easy to mount
·Space savings
·High power density


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M		 55
55		 V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25
External lead current limit
TC = 25, pulse width limited by TJM		 110
75
250		 A
A
IAR
EAR
EAS		 TC = 25
TC = 25
TC = 25		 110
30
1.0		 A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4 Ω		 10 V/ns
PD TC = 25 330 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque(TO-3P / TO-220) 1.13/10 Nm/lb.in.
Weight TO-3P
TO-220
TO-263		 5.5
4
3		 g
g
g



Parameters:

Technical/Catalog InformationIXTP110N055P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2210pF @ 25V
Power - Max390W
PackagingTube
Gate Charge (Qg) @ Vgs76nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP110N055P
IXTP110N055P



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Crystals and Oscillators
WT325BI0030.000000
2SB49
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Filters
PICO2205A
PICO2204A
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more