IGBT Transistors 30 Amps 600V 2.5 Rds
IXST30N60B2D1: IGBT Transistors 30 Amps 600V 2.5 Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 250 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-268-3 |
Packaging : | Tube |
Technical/Catalog Information | IXST30N60B2D1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 48A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 24A |
Power - Max | 150W |
Mounting Type | Surface Mount |
Package / Case | TO-268 |
Packaging | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXST30N60B2D1 IXST30N60B2D1 |