IXST15N120BD1

IGBT Transistors 30 Amps 1200V 3.4 Rds

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SeekIC No. : 00143089 Detail

IXST15N120BD1: IGBT Transistors 30 Amps 1200V 3.4 Rds

floor Price/Ceiling Price

Part Number:
IXST15N120BD1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3.4 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-268-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-268-3
Collector-Emitter Saturation Voltage : 3.4 V


Features:

• High Blocking Voltage
• Epitaxial Silicon drift region
   - fast switching
   - small tail current
   - low switching losses
• MOS gate turn-on for drive simplicity
• Molding epoxies meet UL 94 V-0 flammability classification



Application

• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• DC choppers



Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1000
1000
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
ID25
ID90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
30
15
60

A
A
A

SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, VCC= 0.8 VCES
ICM = 40
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 ?, non repetitive
10 s
PC TC = 25°C 150 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Weight TO-220
TO-263
4
2
g
g



Parameters:

Technical/Catalog InformationIXST15N120BD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 15A
Power - Max150W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXST15N120BD1
IXST15N120BD1



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