IXSN80N60BD1

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Configuration : Single Dual Emitter
Package / Case : SOT-227B-4


Features:

·International standard package
·Aluminium-nitride isolation
   - high power dissipation
·Isolation voltage 3000 V~
·UL registered E 153432
·Low V_CE(sat)
  - for minimum on-state conduction losses
·Fast Recovery Epitaxial Diode
  - short t^rr and I_RM
·Low collector-to-case capacitance (< 60 pF)
  - reduced RFI
·Low package inductance (< 10 nH)
  - easy to drive and to protect


Application

·AC motor speed control
·DC servo and robot drives
·DC choppers
·Uninterruptible power supplies (UPS)
·Switch-mode and resonant-mode power supplies