IXSN35N120AU1

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single Dual Emitter
Package / Case : SOT-227B-4


Features:

· International standard package miniBLOC (ISOTOP) compatible
· Aluminium-nitride isolation
    - high power dissipation
· Isolation voltage 3000 V~
· Low V_CE(sat)
    - for minimum on-state conduction losses
· Fast Recovery Epitaxial Diode
    - short trr and IRM
· Low collector-to-case capacitance (< 50 pF)
    - reducesd RFI
· Low package inductance (< 10 nH)
- easy to drive and to protect


Application

·AC motor speed control
·DC servo and robot drives
·DC choppers
·Uninterruptible power supplies (UPS)
·Switch-mode and resonant-mode power supplies


Specifications

Symbol	Test Conditions	Maximum	Ratings
VCES VCGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M	1200 1200	V V
VGES VGEM	Continuous Transient	±20 ±30	V
IC25 IC90 ICM	TC = 25°C TC = 90°C TC = 25°C, 1 ms	70 35 140	A A A
SSOA (RBSOA)	VGE = 15 V, TJ = 125°C, RG = 2.7 Clamped inductive load, VCC= 0.8 VCES	ICM =70 @ 0.8 VCES	A
tSC (SCSOA)	VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 ?, non repetitive	10	s
PC PD	TC = 25°C IGBT Diode	300 175	W W
VISOL	50/60 Hz t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
Md	Mounting torque Terminal connection torque (M4)	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

Parameters:

Technical/Catalog Information	IXSN35N120AU1
Vendor	IXYS
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXSN35N120AU1 IXSN35N120AU1