IGBT Transistors 35 Amps 1200V 4 Rds
IXSN35N120AU1: IGBT Transistors 35 Amps 1200V 4 Rds
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Features: · International standard package miniBLOC· Aluminium-nitride isolation - high power diss...
Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT-227B-4 | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
1200 1200 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V |
IC25 IC90 ICM |
TC = 25°C TC = 90°C TC = 25°C, 1 ms |
70 35 140 |
A |
SSOA (RBSOA) |
VGE = 15 V, TJ = 125°C, RG = 2.7 Clamped inductive load, VCC= 0.8 VCES |
ICM =70 @ 0.8 VCES |
A |
tSC (SCSOA) |
VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 ?, non repetitive |
10 | s |
PC PD |
TC = 25°C IGBT Diode |
300 175 |
W W |
VISOL | 50/60 Hz t = 1 min IISOL 1 mA t = 1 s |
2500 3000 |
V~ V~ |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Md | Mounting torque Terminal connection torque (M4) |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
Weight | 30 | g |
Technical/Catalog Information | IXSN35N120AU1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXSN35N120AU1 IXSN35N120AU1 |