IXSN55N120AU1

IGBT Transistors 110 Amps 1200V 4 Rds

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SeekIC No. : 00143599 Detail

IXSN55N120AU1: IGBT Transistors 110 Amps 1200V 4 Rds

floor Price/Ceiling Price

Part Number:
IXSN55N120AU1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/2

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Product Details

Quick Details

Configuration : Single Dual Emitter Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : SOT-227B-4 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single Dual Emitter
Package / Case : SOT-227B-4


Features:

• International standard package miniBLOC (ISOTOP) compatible
• Aluminium-nitride isolation
   - high power dissipation
• Isolation voltage 3000 V~
• Low VCE(sat)
   - for minimum on-state conduction losses
• Fast Recovery Epitaxial Diode
   - short trr and IRM
• Low collector-to-case capacitance (< 60 pF)
   - reduces RFI
• Low package inductance (< 10 nH)
   - easy to drive and to protect



Application

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies



Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1200
1200
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
110
55
160

A
A
A

SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, VCC= 0.8 VCES
ICM =110
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 , non repetitive
10 s
PC TC = 25°C IGBT
Diode
500
175
W
W
VISOL 50/60 Hz t = 1 min
IISOL  1 mA t = 1 s
2500
3000
V~
V~
TJ
TJM
Tstg
1.6 mm (0.063 in) from case for 10 s -55 ... +150
150
-55 ... +150
°C
°C
°C
Md Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.



Parameters:

Technical/Catalog InformationIXSN55N120AU1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)110A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 55A
Power - Max500W
Mounting TypeChassis Mount
Package / CaseSOT-227B miniBLOC
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSN55N120AU1
IXSN55N120AU1



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