IGBT Transistors 80 Amps 1200V 4 Rds
IXSN55N120A: IGBT Transistors 80 Amps 1200V 4 Rds
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · International standard package miniBLOC· Aluminium-nitride isolation - high power diss...
Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT-227B-4 | Packaging : | Tube |
The IXSN55N120A can be applicated in AC motor speed control; DC servo and robot drives; DC choppers; uninterruptible power supplies (UPS); switch-mode and resonant-mode; power supplies, which possesses the advantages of space savings; easy to mount with 2 screws; high power density.
The features of IXSN55N120A can be summarized as (1)international standard package miniBLOC; (2)aluminium-nitride isolation-high power dissipation; (3)isolation voltage 3000 V~; (4)UL registered E 153432; (5)low VCE(sat) for minimum on-state conduction losses; (6)low collector-to-case capacitance(<100 pF) reduces RFI; (7)low package inductance (< 10 nH)-easy to drive and to protect.
The absolute maximum ratings of IXSN55N120A are (1)VCES TJ= 25°C to 150°C: 1200 V; (2)VCGR TJ= 25°C to 150°C; RGE= 1 M: 1200 A; (3)VGES continuous: ±20 V; (4)VGEM transient: ±30 V; (5)IC25 TC= 25°C: 110 A; (6)IC90 TC= 90°C: 55 A; (7)ICM TC= 25°C, 1 ms: 160 A; (8)PC TC= 25°C IGBT: 500 W; (9)VISOL 50/60 Hz t = 1 min: 2500 V~, IISOL 1 mA t = 1s: 3000 V~; (10)TJ: -55 to +150 °C; (11)TJM: 150 °C; (12)Tstg: -55 to +150 °C; (13)Md Mounting torque: 1.5/13 Nm/lb.in; Terminal connection torque (M4): 1.5/13 Nm/lb.in.; (14)weight: 30 g.