IGBT Transistors 75 Amps 600V 2.5 Rds
IXSN50N60BD3: IGBT Transistors 75 Amps 600V 2.5 Rds
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Features: · International standard package miniBLOC· Aluminium-nitride isolation - high power diss...
Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT-227B-4 | Packaging : | Tube |
Technical/Catalog Information | IXSN50N60BD3 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 75A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
Power - Max | 250W |
Mounting Type | Chassis Mount |
Package / Case | SOT-227B miniBLOC |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXSN50N60BD3 IXSN50N60BD3 |