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IXSH50N60B

IGBT Transistors 75 Amps 600V 2.5 Rds

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SeekIC No. : 00143003 Detail

IXSH50N60B: IGBT Transistors 75 Amps 600V 2.5 Rds

IXSH50N60B Data Sheet

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Part Number:
IXSH50N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-247-3
Collector-Emitter Saturation Voltage : 2.5 V


Features:

· International standard package JEDEC TO-247 AD, and TO-247 SMD for surface mount
· Guaranteed Short Circuit SOA capability
· High frequency IGBT
· Latest generation HDMOSTM process
· Low VCE(sat)
   - for minimum on-state conduction losses
· MOS Gate turn-on
   - drive simplicity


Application

· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninterruptible power supplies (UPS)
· Switch-mode and resonant-mode power supplies


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ		 600
600		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
IC25
IC90
ICM		 TC = 25°C, limited by leads
TC = 90°C
TC = 25°C, 1 ms		 75
50
200		 A
A
A
SSOA
(RBSOA)		 VGE = 15 V, TVJ = 125°C, RG = 22 Ω
Clamped inductive load, L = 30 µH		 ICM = 100
@ 0.8 VCES		 A
tSC
(SCSOA)		 VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 22 Ω, non repetitive		 10 µs
PC TC = 25°C 250 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 SMD
TO-247		 4
6		 g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C



Parameters:

Technical/Catalog InformationIXSH50N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
Power - Max250W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSH50N60B
IXSH50N60B



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