IXSH45N120

IGBT Transistors 45 Amps 1200V 3 Rds

product image

IXSH45N120 Picture
SeekIC No. : 00143473 Detail

IXSH45N120: IGBT Transistors 45 Amps 1200V 3 Rds

floor Price/Ceiling Price

Part Number:
IXSH45N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/31

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247AD-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247AD-3


Features:

· International standard package JEDEC TO-247
· High frequency IGBT with guaranteed Short Circuit SOA capability
· Fast Fall Time for switching speeds up to 20 kHz
· 2nd generation HDMOSTM process
· Low VCE(sat)
    - for minimum on-state conduction losses
· MOS Gate turn-on
    - drive simplicity



Application

· AC motor speed control
· DC servo and robot drive
· Uninterruptible power supplies (UPS)
· Switch-mode and resonant-mode power supplies
· Welding



Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1200
1200
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
75
45
180

A
A
A

SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, VCC= 0.8 VCES
ICM =90
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 , non repetitive
10 s
PC TC = 25°C 300 W
TJ
TJM
Tstg
1.6 mm (0.063 in) from case for 10 s -55 ... +150
150
-55 ... +150
°C
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight   6 g



Parameters:

Technical/Catalog InformationIXSH45N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 45A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-247AD
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSH45N120
IXSH45N120



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Hardware, Fasteners, Accessories
Power Supplies - Board Mount
RF and RFID
Audio Products
Crystals and Oscillators
View more