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IXSH30N60U1

IGBT Transistors 30 Amps 600V

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SeekIC No. : 00143550 Detail

IXSH30N60U1: IGBT Transistors 30 Amps 600V

IXSH30N60U1 Data Sheet

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Part Number:
IXSH30N60U1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247AD-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247AD-3


Features:

• International standard package JEDEC TO-247 AD
• High frequency IGBT with guaranteed Short Circuit SOA capability
• IGBT and anti-parallel FRED in one package
• 2nd generation HDMOSTM process
• Low VCE(sat)
   - for low on-state conduction losses
• MOS Gate turn-on
   - drive simplicity

 




Application

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ		 600
600		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
IC25
IC90
ICM		 TC = 25°C
TC = 90°C
TC = 25°C, 1 ms		 50
30
100		 A
A
A
SSOA
(RBSOA)		 VGE = 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load, L = 100 µH		 ICM = 60
@ 0.8 VCES		 A
tSC
(SCSOA)		 VGE = 15 V, VCE =360 V, TJ = 125°C
RG = 33 Ω, non repetitive		 10 µs
PC TC = 25°C 200 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight   6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C



Parameters:

Technical/Catalog InformationIXSH30N60U1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSH30N60U1
IXSH30N60U1



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