Specifications VDSS TJ = 25°C to 150°C500 V VDGR TJ = 25°C to 150°C; RGS = 1 M 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability 75N50 75 A 80N50 80A IDM TC = 25°C, pulse width limited by TJM 75N50 300 A 80N50 320 A IAR TC = 25°C 80 A EAR T...
IXFN 80N50: Specifications VDSS TJ = 25°C to 150°C500 V VDGR TJ = 25°C to 150°C; RGS = 1 M 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability 75N50 75 A 80N50 80A...
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Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
VDSS TJ = 25°C to 150°C 500 V |
VDGR TJ = 25°C to 150°C; RGS = 1 M 500 V |
VGS Continuous ±20 V |
VGSM Transient ±30 V |
ID25 TC = 25°C, Chip capability 75N50 75 A |
IDM TC = 25°C, pulse width limited by TJM 75N50 300 A 80N50 320 A |
IAR TC = 25°C 80 A |
EAR TC = 25°C 64 mJ |
EAS TC = 25°C 6 J |
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 5 V/ns TJ 150°C, RG = 2 |
PD TC = 25°C 700 W |
TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C |
VISOL 50/60 Hz, RMS t = 1 min 2500 V~ IISOL 1 mA t = 1 s 3000 V~ |
Md Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque 1.5/13 Nm/lb.in. |
Weight 30 g |