Features: ·International standard packages·miniBLOC,with Aluminium nitride isolation·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance·Fast intrinsic RectifierApplication·DC-DC converters·Battery chargers·Switched-m...
IXFN 34N80: Features: ·International standard packages·miniBLOC,with Aluminium nitride isolation·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low...
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Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: • International standard package• Encapsulating epoxy meets UL 94 V-0, flamm...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Symbol | Test Conditions |
Maximum |
Ratings |
VDSS VDGR |
TJ = 25 to 150 TJ = 25 to 150 ; RGS = 1 M |
70 70 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IL(RMS) IDM IAR |
TC = 25 , TC = 25 , pulse width limited by TJM |
340 100 1360 200 |
A A A A |
EAR | TC = 25 |
64 |
mJ |
EAS | TC = 25 |
4 |
J |
dv/dt | IS IDM, di/dt100 A/s, VDDVDSS, TJ 150 , RG = 2 |
5 |
V/ns |
PD | TC = 25 |
700 |
W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
| |
TL | 1.6 mm (0.063 in) from case for 10 s | 300 | |
VISOL | 50/60 Hz, RMS t = 1 min IISOL1 mA t = 1 s |
2500 3000 |
V~ V~ |
Md | Mounting torque Terminal connection torque |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
Weight |
30 |
g |