IXFN 34N80

Features: ·International standard packages·miniBLOC,with Aluminium nitride isolation·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance·Fast intrinsic RectifierApplication·DC-DC converters·Battery chargers·Switched-m...

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IXFN 34N80 Picture
SeekIC No. : 004381551 Detail

IXFN 34N80: Features: ·International standard packages·miniBLOC,with Aluminium nitride isolation·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low...

floor Price/Ceiling Price

Part Number:
IXFN 34N80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/9/16

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Product Details

Description



Features:

·International standard packages
·miniBLOC,with Aluminium nitride isolation
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier



Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls



Specifications

Symbol Test Conditions
Maximum
Ratings
VDSS
VDGR
TJ = 25 to 150
TJ = 25 to 150 ; RGS = 1 M
70
70
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IL(RMS)
IDM
IAR
TC = 25 ,

TC = 25 , pulse width limited by TJM
340
100
1360
200
A
A
A
A
EAR TC = 25
64
mJ
EAS TC = 25
4
J
dv/dt IS IDM, di/dt100 A/s, VDDVDSS,
TJ 150 , RG = 2
5
V/ns
PD TC = 25
700
W
TJ
TJM
Tstg
 
-55 ... +150
150
-55 ... +150


TL 1.6 mm (0.063 in) from case for 10 s 300
VISOL 50/60 Hz, RMS t = 1 min
IISOL1 mA t = 1 s
2500
3000
V~
V~
Md Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight  
30
g



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