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IXFN 25N80

Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification• miniBLOC, with Aluminium nitride isolation• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) ra...

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SeekIC No. : 004381547 Detail

IXFN 25N80: Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification• miniBLOC, with Aluminium nitride isolation• Low RDS (on) HDMOSTM...

IXFN 25N80 Data Sheet

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Part Number:
IXFN 25N80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Features:

• International standard packages
• JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification
• miniBLOC, with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls


Specifications

Symbol
Test conditions
Maximum
ratings
IXFK
IXFN
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
800
800
800
800
V
V
VGS
VGSM
Continuous
Transient
±20
±30
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
27N80 27
25N80 25
27N80 108
25N80 100
27N80 14
25N80 13
27
25
108
100
14
13
A
A
A
A
A
A
EAR
TC = 25°C
30
30
mJ
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 2
5
5
V/ns
PD
TC = 25°C
500
520
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
-
°C
VISOL
50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s
-
-
2500
3000
V~
V~
Md
Mounting torque
Terminal connection torque
0.9/6
-
1.5/13
1.5/13.
Nm/lb.in.
Nm/lb.in.
Weight
10
30
g



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