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IXFN80N50Q2: MOSFET 80 Amps 500V 0.06 Rds

IXFN80N50Q2 Data Sheet

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Part Number:: IXFN80N50Q2
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/21

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	80 A
Resistance Drain-Source RDS (on) :	0.06 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-227B	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.06 Ohms

Parameters:

Technical/Catalog Information	IXFN80N50Q2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	60 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	12800pF @ 25V
Power - Max	890W
Packaging	Tube
Gate Charge (Qg) @ Vgs	250nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN80N50Q2 IXFN80N50Q2

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IXFN80N50Q2

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